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Your search returned 44 records. Click on the hyperlinks to view further details of Titles.. |
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Magazine Name : Ieee Transactions On Electron Devices
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Year : 2003 Volume number : 50 Issue: 02 |
Deep-Depletion High-Frequency Capacitance-Voltage Responses Under Photonic Excitation And Distribution Of Interface States In Mos Capacitors
(Article)
Subject:
C-V
,
Deep-Depletion
Author:
D.M
Kim
page:
1131
-
1157
A Self Consistent Model For Temperature And Current Distribution In Abrupt Heterojunction Bipolar Transistors
(Article)
Subject:
Current Collapse
,
Hbt
,
Current Gain
Author:
A F M
Anwar
Mirza M
Jahan
page:
272
-
277
Scaling Of Strained Si N Mosfets Into The Ballistic Regime And Associated Anisotropic Effects
(Article)
Subject:
Ballistic Transport
,
Monte Carlo Methods
,
Mosfet Scaling
Author:
F.M.
Bufler
Wolfgang
Fichtner
page:
278
-
284
Analysis Of Surface State And Impact Ionization Effects On Breakdown Charateristics And Gate Lag Phenomena In Narrowly Recessed Gate Gaas Fets
(Article)
Subject:
Surface State
,
Breakdown
,
Gate-Lag
Author:
Yasutaka
Mitani
Daisuke
Kasai
Kazushige
Horio
page:
285
-
291
The Origins Of Leaky Characteristics Of Schottky Diodes On P Gan
(Article)
Subject:
Doping
,
P-Gan
,
Tunneling
Author:
L. S
Yu
L
Jia
S. S.
Lau
page:
292
-
296
Study Of Trapping Phenomenon In 4h Sic Mesfets Dependence On Substrate Purity
(Article)
Subject:
Htcvd
,
Trapping
,
Mesfets
Author:
Erwan
Morvan
Nabil
Sghaier
Abdelkader
Souifi
page:
297
-
302
Improvements In Direct Current Characteristics Of Al0.45 Ga0.55 As Gaas Digital Graded Superlattice Emitter Hbts With Reduced Turn On Voltage By Wet Oxidation
(Article)
Subject:
Wet Oxidation
,
Offset Voltage
,
Potential Spike
Author:
Ming-Kwen
Tsai
Shih-Wei
Tan
Wen-Shiung
Lour
page:
303
-
309
Elimination Of Kink Phenomena And Drain Current Hysteresis In Lnp Based Hemts With A Direct Ohmic Structure
(Article)
Subject:
Current Control
,
Hemt
,
Kink
Author:
Ken
Sawada
Naoki
Hara
Tomoyuki
Arai
page:
310
-
314
Theoretical Study Of A Gan Algan High Electron Mobility Transistor Including A Nonlinear Polarization Model
(Article)
Subject:
Gallium Compound
,
Modeling
,
Modfets
Author:
Kevin F
Brennan
Tsung-Hsinh
Yu
page:
314
-
323
Pulsed Measurements And Circuit Modeling Of Weak And Strong Avalanche Effects In Gaas Mesfets And Hemts
(Article)
Subject:
Breakdown
,
Circuit Modeling
,
Pulsed Measurements
Author:
Gaudenzio
Meneghesso
Alessandro
Chini
Enrico
Zanoni
page:
324
-
332
Electrical Characterization And Material Evaluation Of Zirconium Oxynitride Gate Dielectric In Tan Gated Nmosfets With High Temperature Forming Gas Annealing
(Article)
Subject:
Mobility
,
Gate Dielectric
Author:
Renee E
Nieh
Jack C
Lee
Jeong Hee
Han
page:
333
-
340
Operating Principles And Performance Of A Noval A-Si H P-I-N-Based X-Ray Detector For Medical Image Applications
(Article)
Subject:
Dynamic Range
,
Linearity
Author:
Sen-Shyong
Fann
Yeu-Long
Jiang
Huey-Liang
Hwang
page:
341
-
346
The Effects Of Nonlocal Impact Ionization On The Speed Of Avalanche Photodiodes
(Article)
Subject:
Bandwidth
,
Frequency Response
Author:
P J
Hambleton
G J
Rees
J P R
David
page:
347
-
351
Uv-Responsive Ccd Image Sensors With Enhanced Inorganic Phosphor Coatings
(Article)
Subject:
Inorganic Phosphor
,
Phosphor Coating
Author:
Wendy A R
Franks
Martin J
Kiik
page:
352
-
358
Improvement Of Color Temperature Using Independent Control Of Red, Green, Blue Luminance In Ac Plasma Display Panel
(Article)
Subject:
Color Temperature
,
Plasma Display Panel
Author:
Ki-Duck
Cho
Heung-Sik
Tae
page:
359
-
365
Experimental Investigations Of The Effect Of The Mode-Hopping On The Noise Properties Of Ingaasp Fabry-Perot Multiple-Quantum-Well Laser Diodes
(Article)
Subject:
Laser Noise
,
Noise Measurements
Author:
Vilius
Palenskis
Jonas
Matukas
J G
Simmons
page:
366
-
371
Hot-Hole-Induced Dielectric Breakdown In Ldmos Transistors
(Article)
Subject:
Hot Carrier Injection
,
Dielectric Breakdown
Author:
Lorenzo
Labate
Stefano
Manzini
page:
372
-
377
A Noval Technique For Fabricating High Reliable Trench Dmosfets Using Self-Align Technique And Hydrogen Annealing
(Article)
Subject:
Power Mosfet
,
Trench Gate
Author:
Jongdae
Kim
Tae Moon
Roh
page:
378
-
383
Improvement Of Surface Carrier Mobility Of Hfo2 Mosfets By High-Temperature Forming Gas Annealing
(Article)
Subject:
Mobility
,
Surface State
Author:
Katsunori
Onishi
Renee E
Nieh
page:
384
-
390
Threshold Voltage-Related Soft Error Degradation In A Tft Sram Cell
(Article)
Subject:
Alpha Particles
,
Soft Error
,
Threshold Voltage
Author:
Shuji
Ikeda
Yasuko
Yoshida
Koichi
Imato
page:
391
-
396
Substrate Triggered Scr Device For On-Chip Esd Protection In Fully Silicided Sub-0.25-Um Cmos Process
(Article)
Subject:
Esd Protection Circuit
,
Electrostatic Discharge (Esd)
Author:
Ming-Dou
Ker
Kuo-Chun
Hsu
page:
397
-
405
Accounting For Quantum Effects And Polysilicon Depletion From Weak To Strong Inversion In A Charge-Based Design-Oriented Mosfet Model
(Article)
Subject:
Quantum Effect
,
Charges Modeling
,
Mosfet Model
Author:
Christophe
Lallement
Pierre C
Fazan
Matthias
Bucher
page:
406
-
417
Monte Carlo Simulation And Measurement Of Nanoscale N-Mosfets
(Article)
Subject:
Semiconductor Device Modeling
,
Nanoscale Mosfets
Author:
F.M.
Bufler
Yoshinori
Asahi
Wolfgang
Fichtner
page:
418
-
424
Effect Of Band Alignment And Density Of States On The Collector Current In P-Si/N-Si1-C/P-Si Hbts
(Article)
Subject:
Bipolar
,
Heterostructure
Author:
Dinkar V
Singh
Jody L
Hoyt
James F
Gibbons
page:
425
-
432
Impact Of Interfacial Layer And Transition Region On Gate Current Performance For High-K Gate Dielectric Stack Its Tradeoff With Gate Capacitance
(Article)
Subject:
Gate Capacitance
,
Gate Current
Author:
Yang-Yu
Fan
Judy
An
Sanjay K
Banerjee
page:
433
-
439
A Quantum Correction Based On Schrodinger Equation Apllied To Monte Carlo Device Simulation
(Article)
Subject:
Mosfet
,
Quantum Effects
,
Monte Carlo Methods
Author:
Brian
Winstead
Umberto
Ravaioli
page:
440
-
446
Impact-Ionization-Assisted Intermediate Band Solar Cell
(Article)
Subject:
Impact Ionization
,
Intermediate Band Solar Cell (Ibsc)
Author:
Antonio
Luque
Lucas
Cuadra
Antonio
Marti
page:
447
-
454
A Compact Analytical Model For Asymmetric Single-Electron Tunneling Transistors
(Article)
Subject:
Compact Modeling
,
Input Capacitance
Author:
Hiroshi
Inokawa
Yasuo
Takahashi
page:
455
-
461
A Multiple-Valued Logic And Memory With Combined Single-Electron And Metal-Oxide-Semiconductor Transistors
(Article)
Subject:
Literal Gate
,
Quantizer
,
Mosfet
Author:
Hiroshi
Inokawa
Akira
Fujiwara
Yasuo
Takahashi
page:
462
-
470
Development Of High-Current 4h-Sic Accufet
(Article)
Subject:
High Temperature
,
Power
,
Switch
Author:
Ranbir
Singh
D Craig
Capell
John W
Palmour
page:
471
-
478
Impact Ionization Measurements And Modeling For Power Phemt
(Article)
Subject:
Breakdown
,
Impact Ionization
Author:
Tamara
Baksht
Sanelia
Solodky
Yoram
Shapira
page:
479
-
485
On The Destruction Limit Of Si Power Diodes During Reverse Recovery With Dynamic Avalanche
(Article)
Subject:
Dynamic Avalanche
,
Power Diode
Author:
Josef
Lutz
Martin
Domeij
Dieter
Silber
page:
486
-
493
A Low-Cost Uncooled Infrared Microbolometer Detector In Standard Cmos Technology
(Article)
Subject:
Microbolometers
,
Infrared Detector
Author:
Tayfun
Akin
Selim
Eminoglu
Deniz Sabuncuoglu
Tezcan
page:
494
-
502
A Diode-Based Two-Wire Solution For Temperature-Compensated Piezoresistive Pressure Sensors
(Article)
Subject:
Pressure Sensor
,
Temperature Compensation
Author:
Patrik
Melvas
Goran
Stemme
page:
503
-
509
Reduction Of Charge-Transport Characteristics Of Sige Dot Floating Gate Memory Device With Zro2 Tunneling Oxide
(Article)
Subject:
Quantum Dot
,
Floating Gate Memory
Author:
Dong-Won
Kim
Freek E
Prins
C H
Lee
page:
510
-
512
Impurity Profile Effects Of Buffer Layer On Pt-Igbt Characteristics
(Article)
Subject:
Buffer Layer
,
Impurity Profile
Author:
Chung-Hee
Kim
Sang-Koo
Chung
page:
513
-
516
A New And Improved Structure Of Polysilicon Resistor For Subquarter Micrometer Cmos Device Applications
(Article)
Subject:
Cmos
,
Polysilicon Resistors
Author:
Kong-Beng
Thei
Hsin-Chien
Lin
Sheng-Fu
Tsai
page:
516
-
518
Si And Zn Co-Doped Ingan-Gan White Light-Emitting Diodes
(Article)
Subject:
White Light-Emitting Diodes
Author:
S J
Chang
L W
Wu
J K
Sheu
page:
519
-
521
Self-Erasing Discharge Mode For Improvement Of Luminous Efficiency In Ac Plasma Display Panel
(Article)
Subject:
Luminance
,
Voltage Margin
Author:
Byung-Gwon
Cho
Heung-Sik
Tae
Sung-Ii
Chien
page:
522
-
524
An Analysis Of Small-Signal Gate-Drain Resistance Effect On Rf Power Mosfets
(Article)
Subject:
Rf Power Mosfets
,
Anomalous Dip
Author:
Yo-Sheng
Lin
Shey-Shi
Lu
page:
525
-
528
Effects Of Uniaxial Mechanical Stress On Drive Current Of 0.13 Um Mosfets
(Article)
Subject:
Mosfet
,
Stress
Author:
Y G
Wang
D B
Scott
J L
Waller
page:
529
-
531
Effect Of Sulfur Passivation And Polyimide Capping On Ingaas-Inp Pin Photodetectors
(Article)
Subject:
Photodetector
,
Surface Recombination
Author:
M R
Ravi
Amitava
Dasgupta
Nandita
Dasgupta
page:
532
-
534
Nitride-Based Light Emitting Diodes With Si-Doped In0.23 Ga0.77 N/Gan Short Period Superlattice Tunneling Contact Layer
(Article)
Subject:
Hall Measurement
,
Led
Author:
C H
Kuo
J M
Tsai
Y K
Su
page:
535
-
537
Reduction Of The Dead Region For Edge On Strip Detector By A Guard Ring Structure
(Article)
Subject:
Silicon
,
Guard Ring
Author:
Dejun
Han
Chuanmin
Wang
Xiaona
Tian
page:
537
-
540
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